Search results for "Cadmium telluride photovoltaics"
showing 10 items of 36 documents
Ion track template technology for fabrication of CdTe and CdO nanocrystals
2020
Abstract CdTe and CdO nanocrystals were synthesized by chemical deposition into a-SiO2/n-Si ion track template formed by 200 MeV Xe ion irradiation with the fluence of 108 ions/cm2. Depending on the temperature of the solution CdTe + CdO and single-phase CdO with a hexagonal crystal structure were obtained, respectively. The study of the current – voltage characteristics of the obtained structure with the single-phase CdO allows us to estimate the number of grain boundaries and the height of the potential barrier, as well as the n-type conductivity.
Radiation hardness studies of CdTe and for the SIXS particle detector on-board the BepiColombo spacecraft
2009
Abstract We report of the radiation hardness measurements that were performed in the developing work of a particle detector on-board ESA's forthcoming BepiColombo spacecraft. Two different high- Z semiconductor compounds, cadmium telluride (CdTe) and mercuric iodide (HgI 2 ), were irradiated with 22 MeV protons in four steps to attain the estimated total dose of 10 12 p / cm 2 for the mission time. The performance of the detectors was studied before and after every irradiation with radioactive 55 Fe source Mn K α 5.9 keV emission line. We studied the impact of the proton beam exposure on detector leakage current, energy resolution and charge collection efficiency (CCE). Also the reconstruct…
Influence of temperature on the synthesis of thiol-stabilized CdTe nanoparticles in aqueous solutions
2010
We have investigated the evolution of thiol-capped cadmium telluride nanocrystals prepared in aqueous solutions at low and room temperature followed by heating at 50–100 °C. The UV–visible absorption spectra, as well as transmission electron microscopy, atomic force microscopy, and dynamic light scattering observations made it possible to reveal differences in size and structure originating from different heating temperatures. It was shown that minimization of the nucleation process temperature provided formation of larger nanoparticles than at higher temperatures.
Interaction between nitroxyl radicals and CdTe quantum dots: Determination of fluorescence-quenching mechanisms in aqueous solution
2019
Abstract The present work characterizes the optical properties of CdTe quantum dots (CdTe QDs) after interaction with nitroxyl radicals based on steady-state and time-resolved fluorescence spectroscopy studies. QDs of different sizes were exposed to 2 different nitroxyl radicals, i.e., TEMPO and 4-amino-TEMPO radicals. A clear dependence of dynamic and static Stern-Volmer constants values, KD and KS, respectively, was observed as a function of the size of QDs used, with a change from a mostly static mechanism (for smaller QD sizes) to a dynamic mechanism predominating as the nanoparticles increase in size. All observed effects are dependent on both the concentration of the radical and the s…
MOCVD growth of CdTe on glass: analysis of in situ post-growth annealing
2004
Abstract In this paper, we analyse the growth by MOCVD of CdTe on glass substrates using in situ post-growth annealing. First, in order to perform a systematic study, polycrystalline layers of CdTe were deposited by MOCVD on glass substrates. The structure and morphology of the layers was investigated as a function of different growth parameters, temperature, VI/II precursor molar ratio and substrate position on the susceptor. An activation energy of Ek=20.7 kcal/mol was obtained from the experimental data. In order to better understand the process and the effects of different growth parameters, a numerical model that simulated the gas flow in the reactor, was developed. Secondly we analyse…
Growth and defect studies of CdTe particles
2013
The paper reports the epitaxial growth of cadmium telluride (CdTe) particles by thermal deposition on cleaved planes of (001)NaCl and (001)KBr. Using high resolution transmission electron microscopy and electron diffraction it was shown that CdTe particles could have different orientation and phase (cubic or hexagonal) depending on the substrate temperature. Their most common defects are twins and stacking faults.
Vapor growth of Hg1−xCdxI2 on glass using CdTe buffer
2001
Abstract Vapor phase epitaxy (VPE) of Hg1−xCdxI2 layers on glass substrates covered by a CdTe buffer layer has been studied. The buffer layers of 2–4 μm thickness were formed by VPE using polycrystalline CdTe and Cd metal sources. The Hg1−xCdxI2 layers were grown using a (Hg1−yCdy)1−z(I2)z polycrystalline source, with a composition in the range of y=0.1–0.5 and z=0.5–0.8. Scanning electron microscopy and X-ray diffraction studies have shown that the composition and structure of Hg1−xCdxI2 layers depend strongly on the VPE conditions. Varying the growth time and source composition, it has been possible to obtain Hg1−xCdxI2 layers with the composition x in the range from approximately 0 (HgI2…
Millimeter wave absorption by confined acoustic modes in CdSe/CdTe core-shell quantum dots
2007
International audience; Taking advantage of the specific core-shell charge separation structure in the CdSe/CdTe core-shell Type-II quantum dots (QDs), we experimentally observed the resonant-enhanced dipolar interaction between millimeter-wave (MMW) photons and their corresponding (l = 1) confined acoustic phonons. With proper choice of size, the absorption band can be tuned to desired frequency of MMW imaging. Exploiting this characteristic absorption, in a fiber-scanned MMW imaging system, we demonstrated the feasibility of CdSe/CdTe QDs as the contrast agents of MMW imaging.
Vapor phase epitaxy of Hg1−xCdxI2 on sapphire
1998
Abstract We demonstrate the possibility of growing Hg 1− x Cd x I 2 layers on sapphire substrates by vapor-phase epitaxy (VPE). The successful growth has been carried out using an α-HgI 2 polycrystalline source and a CdTe buffer layer grown on sapphire by metalorganic vapor phase epitaxy (MOVPE) before the Hg 1− x Cd x I 2 VPE growth. The Hg 1− x Cd x I 2 /sapphire 20–40 μm thick layers with a uniform composition in the range of x =0.2–0.6 were grown at 220–250°C for 70–300 h. The layers were studied by scanning electron microscopy, energy disperse X-ray analysis and X-ray diffractometry. Results on the layer characterization are reported and the effect of VPE conditions on the layer proper…
Influence of twinned structure on the morphology of CdTe(111) layers grown by MOCVD on GaAs(100) substrates
2003
Abstract The morphology and structure of CdTe(1 1 1) layers grown on GaAs(1 0 0) by MOCVD have been studied by atomic force microscopy (AFM) and X-ray texture analysis. Growth conditions have been chosen so that mirror-like CdTe layers are obtained. Layers whose growth times vary between 10 s and 2 h have been investigated. The X-ray texture analysis shows that the CdTe layers grown on GaAs substrates that were thermally treated at 580°C for 30 min in a H 2 atmosphere exhibit a (1 1 1) preferential orientation and are twinned. This twinned structure of the (1 1 1)CdTe layer which is observed as 60° rotated triangular crystallites in the AFM images strongly influences the surface morphology.…